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Concurrent Optimization of MDP, Mask Writing, andMask Inspection for Mask Manufacturing Cost Reduction

机译:MDP,掩模写入,ANDMASK检查的同时优化,用于掩模制造成本降低

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As the feature size of LSI shrinks the cost of mask manufacturing and turn-around-time (TAT) continues to increase.These increases are reaching to points of great concerns. Association of Super-Advanced Electronics Technologies(ASET) Mask Design, Drawing, and Inspection Technology Research Department (Mask D2I) launched a 4-yearprogram for reducing mask manufacturing cost and TAT by concurrent optimization of MDP, mask writing, and maskinspection that involves exploitation of close relationships and synergism among them. The task will be accomplished bysharing four key avenues: a) common data format, b) clever use of repeating patterns, c) pattern prioritization based ondesign intent, and d) parallel processing. Under the concurrent optimization scheme, mask pattern priorities that we callas Mask Data Rank (MDR) are extracted from the design side, and repeating patterns are extracted from mask patterndata. These are fed-forward to mask writing and mask inspection sides. In mask writing, MDR is employed to optimizethe writing conditions; and in Character Projection (CP) writing, repeating patterns are utilized for that purpose. In maskinspection, MDR is used to optimize defect judgment conditions, and repeating patterns are utilized for efficient review.For mask writing, we are developing a parallel e-beam writing system Multi Column Cell (MCC). Furthermore, we aredeveloping an integrated diagnostic system for e-beam mask writer, and a technology for defect judgment technologybased on defect printability in mask inspection. In this paper we describe details of our activity, its status, and somerecent results.
机译:由于LSI的特征大小缩小面膜制造和转弯时间(TAT)的成本继续增加。这些增加达到了极大的关注点。超级先进电子技术(ASET)掩模设计,绘图和检验技术研究部门(面具D2I)通过MDP,掩模写作和屏蔽薄壁的同时优化来降低掩模制造成本和TAT,推出了4-重组制造成本和TAT,涉及剥削密切关系与它们之间的协同作用。该任务将通过分享四个关键途径:a)常见的数据格式,b)巧妙地使用重复模式,c)基于的ondesign意图模式优先级,d)并行处理。在并发优化方案下,从设计侧提取我们Callas掩码数据秩(MDR)的掩模模式优先级,并从掩模图案数据中提取重复模式。这些是向前转发的,以掩盖写作和掩模检查侧面。在掩模写作中,MDR用于优化写作条件;并且在字符投影(CP)写入中,用于该目的的重复模式。在MaskIsPection中,MDR用于优化缺陷判断条件,并且使用重复模式用于有效的评论。对于掩码写入,我们正在开发一个平行的电子束写入系统多列电池(MCC)。此外,我们开发了一种用于电子束掩模作家的集成诊断系统,以及用于掩模检查中缺陷可印刷性的缺陷判断技术。在本文中,我们描述了我们的活动,其状态和六种结果的细节。

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