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ScCO_2-based Processes In Semiconductor Manufacturing: Why Did It Fail?

机译:基于SCCO_2的半导体制造过程:为什么它失败了?

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During the first half of this decade, almost everyone involved in semiconductor manufacturing research assumed that some -lab-scale proven- supercritical CO_2-based processes could offer significant improvements over some specific, existing IC processing steps. However, if one tries to implement these processes in bigger (full wafer scale) reactors, and in a high demanding, ultra clean (IC manufacturing compatible) processing environment, a number of serious issues are encountered. Hardware-related problems, as well as process-related problems like lack of reproducibility, uncontrollable background contamination, material compatibility issues, and within-wafer inhomogeneities are the mayor hurdles to be taken in order to be accepted in standard, high volume IC manufacturing. As a result of this, almost every IC- and processing tool manufacturer world-wide, stopped working on developing scCO_2-based processes.
机译:在本十年的上半年,几乎所有参与半导体制造研究的每个人都假定了一些-Lab级证明的超临界CO_2的过程可以通过一些特定的现有IC处理步骤提供显着的改进。但是,如果一个人试图在更大(完整晶片刻度)反应器中实现这些过程,并且在高要求,超清洁(IC制造兼容)处理环境中,遇到了许多严重问题。与硬件相关的问题,以及缺乏可重复性,无法控制的背景污染,材料兼容性问题以及晶圆内不均匀的过程相关的问题是待采取的市长障碍,以便在标准高批量IC制造中接受。因此,几乎每个IC和处理工具制造商都在全球范围内停止开发基于SCCO_2的流程。

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