Study of High Temperature Piezoelectric Scandium Aluminum Nitride Thin Films

摘要

A1N has weak piezoelectric property (piezoelectric coefficient d_(33)=5.5pCN~(-1)) and a high Curie temperature (>1150°C). By Sc-doping in A1N thin films, it is possible to synthesize Sc_xAl_(1-x)N alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented A1N thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of Sc_xAl_(1-x)N.