Aluminum nitride piezoelectric thin film, piezoelectric material, piezoelectric component, and aluminum nitride piezoelectric thin film manufacturing method

摘要

An aluminum nitride piezoelectric thin film having nitrogen polarity and excellent mass productivity is obtained. A method of manufacturing an aluminum nitride piezoelectric thin film, comprising growing an aluminum nitride piezoelectric thin film 3 containing germanium and an aluminum nitride piezoelectric thin film containing germanium by sputtering on a substrate 2.