Influence of Substrate Temperature on Properties of Tin Sulfide Thin Films

摘要

Tin sulfide (SnS) thin films for solar cells were deposited by vacuum evaporation at different substrate temperatures in a range of 20～200°C. The films were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM) for structural analysis. The electrical and optical properties were also investigated. Under the substrate temperature of 150°C, the obtained SnS thin film was in orthorhombic structure with a grain size of 0.5 μm and composition of Sn:S =1:1. The measurement results from hot probe method showed p-type nature for the deposited films. Dark-conductivity and photo-conductivity were 0.01Ω~(-1)cm~(-1) and 0.08Ω~(-1)cm~(-1), respectively. The optical band-gap energy of the films was estimated to be 1.402 eV.