Defects and leakage current in PbTiO{sub}3 single crystals

摘要

Single crystals of PbTiO{sub}3 (PT) were grown by a self flux method, and effects of lattice defects on the leakage current properties were investigated. While PT crystals annealed in air at 700°Cshowed a leakage current density of the order of 10{sup}(-5) A/cm{sup}2, annealing under a high oxygen partial pressure of 35 MPa increased leakage current density to 10{sup}(-4) A/cm{sup}2. The increase in leakage current by the oxidation treatment provides direct evidence that electron hole is a detrimental carrier for the leakage current property of PT at room temperature. The vacancies of Pb are suggested to act as an electron acceptor for generating electron holes.