POINT DEFECT SIMULATOR, POINT DEFECT SIMULATION PROGRAM, POINT DEFECT SIMULATION METHOD, METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, AND SINGLE CRYSTAL PULLING DEVICE

摘要

Provided is a point defect simulator whereby the distribution of point defects in a silicon single crystal can be determined while taking into account thermal stress that occurs within the silicon single crystal during growth of the single crystal. This point defect simulator 1 calculates a concentration distribution of interstitial silicon and vacancies during pulling of a silicon single crystal by the CZ method, using the advective diffusion equation while taking into account the effect of thermal stress in the silicon single crystal, and the point defect simulator 1 is characterized by comprising an analysis unit 13 for adjusting the calculation result so as to match an experimental result, using a stress coefficient which is the coefficient of a stress term as a fitting parameter.