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ZZ-HVS: Zig-zag horizontal and vertical sleep transistor sharing to reduce leakage power in on-chip SRAM peripheral circuits

机译:ZZ-HVS:Zig-Zag水平和垂直睡眠晶体管共享,以减少片上SRAM外围电路的漏电

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Based on Recent studies peripheral circuit (including decoders, wordline drivers, input and output drivers) constitutes a large portion of the cache leakage. In addition as technology migrate to smaller geometries, leakage contribution to total power consumption increases faster than dynamic power, promoting leakage as the largest power consumption factor. This paper proposes zig-zag share, a circuit technique to reduce leakage in SRAM peripheral. Using architectural control of zig-zag share, an integrated technique called Sleep-Share is proposed and applied in L1 and L2 caches. The results show leakage reduction by up to 40X in deeply pipelined SRAM peripheral circuits, with only a 4% area overhead and small additional delay.
机译:基于最近的研究外围电路(包括解码器,Wordline驱动程序,输入和输出驱动程序)构成高速缓存泄漏的大部分。此外,由于技术迁移到较小的几何形状,泄漏对总功耗的贡献比动态功率更快,促进泄漏作为最大功耗因数。本文提出了Zig-ZAG份额,一种减少SRAM外围设备泄漏的电路技术。利用Zig-Zag份额的架构控制,提出了一种称为睡眠份额的综合技术,并应用于L1和L2缓存。结果在深入流水线SRAM外围电路中显示泄漏减少到40倍,只有4%的面积开销和小额额外延迟。

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