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Sensitivity evaluation of TMR-hardened circuits to multiple SEUs induced by alpha particles in commercial SRAM-based FPGAs

机译:基于商业SRAM的FPGAα颗粒诱导的TMR硬化电路对多种SEU的敏感性评估

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We present an experimental analysis of the sensitivity of SRAM-based FPGAs to alpha particles. We study how the different resources inside the FPGA (LUTs, MUXs, PIPs, etc.) are affected by alpha-induced SEUs, assessing the cross section for the configuration memory cells controlling each of them. We then show two case studies, a chain of FIR filters and a series of soft microcontrollers implemented in the FPGA, measuring the rate of functional interruptions during exposure to a constant flux of alpha particles. The designs are then hardened using triplication with a single final voter, with intermediate voters, and finally including also feedback voters. The robustness of each hardening solution is discussed, analyzing the trade-off between area and fault-tolerance as a function of the number of SEUs in the configuration memory. An analytical model to predict the cross section of a given design with and without hardening solutions is finally proposed, starting from the experimental data.
机译:我们介绍了基于SRAM的FPGA对α颗粒的敏感性的实验分析。我们研究了FPGA(LUT,MUX,PIPS等)内的不同资源是如何受到alpha诱导的SEU的影响,评估控制每个的配置存储器单元的横截面。然后,我们展示了两种案例研究,一系列FIR过滤器和在FPGA中实现的一系列软微控制器,测量在暴露于α颗粒的恒定通量期间的功能中断速率。然后使用中间选民的单个最终选民的三倍地使用三倍,并且最终包括反馈选民的设计。讨论了每个硬化解决方案的鲁棒性,在配置存储器中的SEU数量之间分析区域和容错之间的权衡。最终提出了一种分析模型,以从实验数据开始,最终提出了具有和不具有硬化溶液的特定设计的横截面。

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