Thin Film Formations of Ferroelectric Material Bi{sub}3Nd{sub}1Ti{sub}3O{sub}12 (BNT), High-k Materials SrTiO{sub}3 (STO) and Nb-doped SrTiO{sub}3(Nb-STO) by Newly Developed MOCVD System

摘要

The mass production system of MOCVD, which has the originally designed vaporizer and liquid source delivery system, has been developed for FeRAM-LSI, DRAM-LSI and so on. In this work, the thin film formations of ferroelectric materials Bi{sub}3Nd{sub}1Ti{sub}3O{sub}12 (BNT), high-k materials SrTiO{sub}3 (STO) and Nb-doped SrTiO{sub}3(Nb-STO) by newly developed MOCVD system were extensively examined.