Ultra-shallow Junction Formation in SOI using Vacancy Engineering

摘要

Forming highly conducting, ultra-shallow boron doped layers, is well known to be achallenge for future CMOS devices. This paper reviews a technique known as vacancyengineering, which is a co-implant process that has been proven to be efficient in reducinganomalous effects, such as transient enhanced diffusion and dopant clustering. Due to relativelylow improvement factors, vacancy engineering has never been implemented as an industrialprocess. However, recent advancements demonstrate that by optimizing the implant, substrateand anneal parameters it is possible to produce low resistive, p-type layers with a high degree ofthermal stability which rival the more preferred techniques used today.