ELECTRICAL PROPERTIES OF Zn{sub}(2-2X)Cu{sub}XIn{sub}XSe{sub}2 THIN FILMS PREPARED BY SELENIZATION OF CO-SPUTTERED Cu-In-Zn ALLOYS

摘要

Polycrystalline p-Zn{sub}(2-2X)Cu{sub}XIn{sub}XSe{sub}2 thin films on glass substrates were prepared by selenization of co-sputtered Cu-In-Zn alloys in a quartz tube under N{sub}2 flow with solid Se source close to samples. Correlation of the films thermopower with their specific resistance and deviation from stoichiometry was investigated. The introduction of zinc atoms into the initial CuInSe{sub}2 film causes the formation of the intrinsic substitution defects such as Zn{sub}(Cu) and Zn{sub}(In) creating the donor and acceptor energy levels in the band gap, respectively. It was shown, that using the results of the thermopower and specific resistance measurements it is possible to carry out an express estimation of suitability of the ZCIS film for preparing high-efficient solar cells.