EFFECT OF ATOMIC H EXPOSURE ON THERMALLY OXIDIZED Si/SiO_2 INTERFACES

摘要

The influence of atomic hydrogen on the surface passivation of the Si-SiO_2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. These defects are not thermally stable and are removed by subsequent thermal treatments at 300°C in N_2. In addition, atomic hydrogen results in the passivation of a certain fraction of thermally stable interface defects. However, the passivation obtained using atomic hydrogen has always been observed to be, at best, equal to, the passivation obtained with molecular hydrogen.