Thermal Stability of Stack Structures of Aluminum Nitride and Lanthanum Oxide Thin Films

摘要

Lanthanum oxide thin films were deposited using alternate injections of La(iPrCp){sub}3 and H{sub}2O and Aluminum nitride films were deposited as capping layer and reaction barrier layer. The AlN reaction barrier layer was effective in increasing thermal stability of La{sub}2O{sub}3 films. However, it was found that Al atoms diffuse onto the film surface during annealing in La{sub}2O{sub}3/AlN/Si stacks and AlO{sub}x species in stacks seems to suppress the oxidizing gas diffusion to the interface. It appears that the behavior of Al and Si atoms in La{sub}xAl{sub}((1-x))O{sub}3/Si system is very important in determining the electrical and structural properties of the film although the diffusion behaviors are not fully understood yet.