IMPACT OF AL, NI, AND TIN METAL GATES ON ZRO_2 -MOS CAPACITORS

摘要

We compare the impact of Aluminum, Nickel and Titanium-Nitride as gate materials on MOS capacitors incorporating metal organic chemical vapor deposited (MOCVD) Zr02. Post metallization annealing (PMA) in forming gas atmosphere on the electrical characteristics of the various gate stacks is a further issue. Aluminum was primarily investigated as a reference material. Whereas TiN-stacks show very promising electrical characteristics necessary for future CMOS devices, Ni-MOS capacitors exhibit an undesired high frequency behavior.