DOPED HfO_2 FOR HIGHER-k DIELECTRICS

摘要

The scaling trend aggressively pushes the silicon process technology toward the introduction of new materials to overcome a number of challenges in the miniaturization. Not only high-k dielectrics but also low-k dielectrics or strained silicon have been intensively investigated for the production. Since an introduction of new materials necessarily changes process technology and equipments, a material selection should be carefully made.