ULTRA-THIN HFON FILMS FORMED WITH HE/FG PLASMA JET ASSISTED PVD PROCESS

摘要

Ultra-thin HfON films with excellent electrical properties have been made with a He/FG Plasma Jet Assisted PVD Process. In the process, He jet with high impinging energy gives rise to an in-situ annealing effect, and forming gas provides atomic N and H incorporation. More than 10% atomic concentration N is found bonded in the ultra-thin HfON films. Electrical characterization proves the high quality of the HfON films with negligible traps and interfacial states.