THICKNESS EFFECT OF BaPbO3 BUFFER LAYERS ON THE FERROELECTRIC PROPERTIES OF PZT THIN FILMS

摘要

The microstructure and electrical properties of lead zirconate titanate (PZT) thin films deposited at 475°C by RF-magnetron sputtering were studied as a function of BaPbC>3 (BPO) thickness, 23nm, 65nm, and 136 nm-thick BPO were adopted in this study. The dielectric constant is approximately 433 for Pt/PZT/BPO(23 nm), 443 for Pt/PZT/BPO(65 nm), and 466 for Pt/PZT/BPO(136 nm), The remanant polarization values in these three type capacitors are 152, 16.0, and 12.4uC/cm2, and the coercive field values are 83,5, 75.1, and 59.2 kV/cm, respectively The reduction of polarization within 30000 s is about 18%, 24%, and 28% for PZT capacitors with 23, 65, and 136 nm-thick BPO, respectively Considering the tradeoffs between crystalline quality and the amount of a-domain, the optimum thickness of BPO buffer layer in this work is 65 nm.