CRYSTAL STRUCTURE, MICROSTRUCTURE AND FERROELECTRIC PROPERTIES OF PZT (55/45) AND PZT (80-20) THIN FILMS DUE TO VARIOUS BUFFER LAYERS

摘要

Correlations between Pb(Zr_xTi_(1-x))O_3 thin films with different Zr contents (x=0.55, 0.8) and buffer layers of ferroelectric-PbTiO_3(PT), ferro/antiferroelectric-(PbBa)ZrO_3 (PBZ) and antiferroelectric-PbZrO_3 (PZ) thin films have been investigated in terms of the crystal structure, microstructure and electric phase of both layers. PT layer improved the crystalline character and surface morphology of both PZT films, while PZ and PBZ layers were only effective in the PZT80 film. Increasing tendency of dielectric properties was more remarkable for the PZT80 film rather than the PZT55 when PT and PZ layers were inserted, respectively. The effect of compositions of PZT and buffer layer on the fatigue character was also investigated.