High performance organic field-effect transistor with oxide/metal bilayer electrodes

摘要

Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO_3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO_3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO_3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.