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Volume contribution to perpendicular anisotropy in Fe_(0.5)Co_(0.5) alloy films on Pd(001), lr(001), and Rh(001)

机译:在Pd(001),LR(001)和RH(001)上的Fe_(0.5)CO_(0.5)合金膜中垂直各向异性的体积贡献

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In tetragonally distorted Fe_(0.5)Co_(0.5) alloy films grown epitaxially on Pd(001), Ir(001), and Rh(001) substrates the crystal field locates the electronic states near the Fermi level (E_F) with one being below E_F and the other above E_F with an energy separation smaller than in bulk nondistorted material. This results in a strong uniaxial anisotropy and an easy magnetization axis perpendicular to the film plane up to the thickness up to which the films remain tetragonally distorted. The strongest perpendicular anisotropy is achieved when the Fe_(0.5)Co_(0.5) films are grown on Rh(001) (c/a=1.24); it systematically decreases for Ir(001) (c/a= 1.18) and Pd(001) (c/a= 1.13) substrates. The phenomenon can be understood as a result of an increasing uniaxial anisotropy with an increasing c/a ratio up to the maximum at c/a= 1.24 for which the maximum uniaxial magnetic anisotropy has been theoretically predicted.
机译:在四边形失真的Fe_(0.5)CO_(0.5)在Pd(001)上生长的合金膜,IR(001)和RH(001)基板上晶体场将电子状态定位在FERMI级(E_F)附近,其中一个是下面的E_F和另一个上面的E_F,能量分离小于散装Nondistorted材料。这导致强大的单轴各向异性和垂直于薄膜平面的易磁化轴线,直到薄膜保持四边形变形的厚度。当Fe_(0.5)CO_(0.5)薄膜在RH(001)上生长(C / A = 1.24)时,实现最强的垂直各向异性;它系统地减少IR(001)(C / A = 1.18)和PD(001)(C / A = 1.13)基板。该现象可以应理解为增加单轴各向异性,其在理论上预测最大单轴磁各向异性的C / A = 1.24的最大C / A的比率增加。

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