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Room temperature ferromagnetism in Mn- and Fe-doped indium tin oxide thin films

机译:室温铁磁性Mn和Fe掺杂铟锡氧化铟薄膜

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Undoped and transition-metal doped indium tin oxide films have been grown by pulsed laser deposition technique, on single crystalline c-plane (0001) and r-plane (1102) sapphire substrates maintained at 500-850 degC. Magnetization measurements of films deposited at different temperatures indicate that ferromagnetism appears for deposition temperatures, T_(dep)>600 degC, with the highest moment for films deposited around 750 degC. Qualitative different ferromagnetic behavior has been observed at room temperature in Fe- and Mn-doped thin films. The stable, hysteretic ferromagnetism of the Fe-doped films is due to the presence of magnetite, as seen in transmission Mossbauer spectra. The Mn-doped films show anhysteretic ferromagnetism which decays over time. It is somehow intrinsic, but not due to the Mn ions, which remains paramagnetic down to 4 K. No anomalous Hall effect is observed.
机译:未掺杂和过渡金属掺杂铟锡氧化钛膜已经通过脉冲激光沉积技术,在单晶C面(0001)和R平面(1102)的蓝宝石基板上保持在500-850℃。在不同温度下沉积的薄膜的磁化测量表明,沉积温度,T_(DEP)> 600degc的铁磁性出现,具有沉积在750 degc约750℃的薄膜的最高矩。在Fe和Mn掺杂的薄膜室温度下观察到定性不同的铁磁性行为。 Fe掺杂薄膜的稳定,滞质铁磁性是由于磁铁矿的存在,如在透射迁移率谱中所示。 Mn掺杂的薄膜显示出随时间衰减的间歇铁磁性。它是以某种方式固有,但不是由于Mn离子,其仍然是顺序达到4k的。没有观察到异常霍尔效果。

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