MANUFACTURING METHOD OF A TRANSPARENT CONDUCTIVE THIN FILM USING AN INDIUM-ZINC-TIN OXIDE TARGET WITH THE REDUCED AMOUNT OF INDIUM, CAPABLE OF SECURING THIN FILM PERFORMANCE SIMILAR OR EQUIVALENT TO AN INDIUM TIN OXIDE, AND A MANUFACTURING METHOD OF AN APPLIED DEVICE THEREOF

摘要

PURPOSE: A manufacturing method of a transparent conductive thin film using an indium-zinc-tin oxide target with the reduced amount of indium is provided to synthesize high conductive oxide powder with nano size through an optimal clean process reducing indium amount in ITO, and to manufacture a high density target by well dispersing the synthesized powder.;CONSTITUTION: A synthesis method of oxide with reduced amount of indium comprises the following step: oxide powder with reduced amount of indium having a bixbyite phase is synthesized by employing zinc and tin to 18.6-28.7% of indium with a clean process in which butanol and metal acetate are reacted. A dispersing agent for manufacturing a high density target from the oxide powder with reduced amount of indium is dodecylamine, ammonium polymethacrylate, or a mixture of dodecylamine and hydroxyl propyl cellulose, and polyethylene glycol. A manufacturing method of the high density target comprises the following steps: the oxide powder with reduced amount of indium is spraying dried and granulized; a target is molded by a first uniaxial molding and a second equivalent pressure molding; and a high density target is manufactured by plasticity and thermal process. In the high density target manufacturing step, the plasticity is performed at 1,350 deg. C under pressurized oxygen atmosphere, and the thermal process is performed at 1,150 deg. C under the atmosphere of 5% of hydrogen and 95% of argon.;COPYRIGHT KIPO 2013;[Reference numerals] (a) Room temperature