首页> 外文会议>Processing of nanoparticle materials and nanostructured films >INDIUM TIN OXIDE NANOSIZED TRANSPARENT CONDUCTIVE THIN FILMS OBTAINED BY SPUTTERING FROM LARGE SIZE PLANAR AND ROTARY TARGETS
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INDIUM TIN OXIDE NANOSIZED TRANSPARENT CONDUCTIVE THIN FILMS OBTAINED BY SPUTTERING FROM LARGE SIZE PLANAR AND ROTARY TARGETS

机译:从大尺寸平面和旋转目标中溅射得到的氧化铟锡纳米化透明导电薄膜

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Indium tin oxide (ITO) transparent conductive thin films widely used as electrode layers in optoelectronic devices, such as flat panel displays, solar cell, touch panels and some others, are usually manufactured by sputtering process, and the requirements for these films in terms of their quality and manufacturing efficiency are constantly growing. In order to obtain high quality films, high quality ITO ceramic sputtering targets and optimized sputtering process have to be used. Advanced ITO sputtering targets produced with a planar design consisting of large tiles and with a new generation rotary design based on hollow cylindrical bodies have been developed and commercialized. ITO sputtering targets with high density (up to 99.5% of TD) and uniform microcrystalline structure allow to produce nano-crystalline thin films with properties, which satisfy to industrial requirements, using optimized DC magnetron sputtering process. The obtained nanosized thin films have high electrical conductivity and transmittance (up to 93%). The influence of target configuration and the features of the sputtering process, which define thin film morphology and properties, are discussed.
机译:广泛用作光电器件(例如,平板显示器,太阳能电池,触摸屏等)的光电层中的电极层的氧化铟锡(ITO)透明导电薄膜通常是通过溅射工艺制造的,这些薄膜的要求包括:它们的质量和制造效率在不断提高。为了获得高质量的薄膜,必须使用高质量的ITO陶瓷溅射靶材和优化的溅射工艺。已开发并商业化了先进的ITO溅射靶,该靶采用平面设计(由大砖块组成)和新一代的基于空心圆柱体的旋转设计生产。具有高密度(达TD的99.5%)和均匀的微晶结构的ITO溅射靶材允许使用优化的DC磁控管溅射工艺生产性能满足工业要求的纳米晶体薄膜。所获得的纳米级薄膜具有高电导率和透射率(高达93%)。讨论了靶材构型的影响以及溅射工艺的特征,这些特征定义了薄膜的形态和性能。

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