INFLUENCE OF OXYGEN CONTENT ON THE HARDNESS AND ELECTRICAL RESISTIVITY OF Cr(N,0) THIN FILMS

摘要

Chromium oxynitride thin films were deposited on Si (100) substrates by pulsed laser deposition. In order to change the oxygen content of thin films, oxygen partial pressure (Po_2) was varied from 5.0 x 10~(-5) Pa to 10 x 10~(-5) Pa. Compositions of the thin films determined by Rutherford backscattering spectroscopy and electron energy loss spectroscopy. The oxygen content (Co) of the thin films was increased from 0 to 40 mol% with increasing Po_2. Phase identification of the thin films analyzed by Fourier-transform infrared spectroscopy and X-ray diffraction. The thin films with only the NaCl-type Cr(N,0) phase were prepared at Po_2= 7.5 x 10~(-5) Pa or less. The hardness of the Cr(N,0) thin films measured by nano-indenter was increased from 19 to 32 GPa with increasing Co. Electrical resistivity of Cr(N,0) thin films measured by a four probe method at room temperature was increased from 10~(-4) to 10~1 ?cm with increasing Co.