The crystalline properties of nanostructured carbon nitride films are analyzed by XRD, SEM, XPS, EDS and FTIR for semiconductor process applications. The thickness and growth rate of CN_x films with different growth conditions are reported and an empirical model is proposed for the thickness calculation to find growth conditions. The deposited carbon nitride has beta-C_3N_4 and lonsdaleite peaks, uniform nanostructured surface which has grain size of about 50 run.. The chemical formula of the deposited carbon nitride film is roughly expressed as C_7N_4 and C_3N.
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