PROPERTIES OF NANOSTRUCTURED CARBON NITRIDE FILMS FOR SEMICONDUCTOR PROCESS APPLICATIONS

摘要

The crystalline properties of nanostructured carbon nitride films are analyzed by XRD, SEM, XPS, EDS and FTIR for semiconductor process applications. The thickness and growth rate of CN{sub}X films with different growth conditions are reported and an empirical model is proposed for the thickness calculation to find growth conditions. The deposited carbon nitride has β-C{sub}3N{sub}4 and lonsdaleite peaks, uniform nanostructured surface which has grain size of about 50 nm. . The chemical formula of the deposited carbon nitride film is roughly expressed as C{sub}7N{sub}4 and C{sub}3N.