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Wideband Reconfigurable Capacitive Shunt-Feedback LNA in 65nm CMOS

机译:65nm CMOS中的宽带可重新配置电容分流器反馈LNA

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A differential LNA using capacitive shunt feedback is demonstrated in 65 nm CMOS. The capacitive shunt feedback structure gives a wideband input matching, Sll <-17dB from 500 MHz - 1GHz for low band and S11 <-20dB from 1.1 GHz - 2.3 GHz for high band. The NF for the complete receiver chain in low band and high band was measured to 3.3 dB and 3.9 dB, respectively. The 1-dB compression point with a OdBm blocker present at 20 MHz offset is OdBm and the NF_(dsb) with OdBm blocker is 13dB. In-band IIP3, and IIP2 are -14.8 dBm, and > 49dBm, respectively for low band and -18.2 dBm and >44 dBm for high band.
机译:使用电容式分流反馈的差动LNA在65nm CMOS中进行了说明。电容式分流反馈结构提供宽带输入匹配,从500 MHz - 1GHz的SLL <-17dB,用于低频带,S11 <-20dB,高频带为1.1 GHz - 2.3 GHz。低频带和高带中的完整接收器链的NF分别测量为3.3dB和3.9 dB。具有在20 MHz偏移量的ODBM阻止器的1-DB压缩点是ODBM,NF_(DSB)具有ODBM阻止器是13dB。带内IIP3和IIP2为-14.8 dBm,和> 49dBm,分别用于低频带和-18.2 dBm,高频段为44 dBm。

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