Wideband Reconfigurable Capacitive shunt-feedback LNA in 65nm CMOS

摘要

A differential LNA using capacitive shunt feedback is demonstrated in 65nm CMOS. The capacitive shunt feedback structure gives a wideband input matching, S11 <−17 dB from 500MHz – 1 GHz for low band and S11 <−20 dB from 1.1 GHz – 2.3GHz for high band. The NF for the complete receiver chain in low band and high band was measured to 3.3 dB and 3.9 dB, respectively. The 1-dB compression point with a 0dBm blocker present at 20MHz offset is 0dBm and the NFdsb with 0dBm blocker is 13 dB. In-band IIP3, and IIP2 are −14.8 dBm, and >49 dBm, respectively for low band and −18.2dBm and >44dBm for high band.