Reconfigurable Inductorless Wideband CMOS LNA for Wireless Communications

摘要

Future hyper-connected devices must support several communication standards, across various frequency bands, with a low-area, single-chip, radio frequency frontend. In this paper, we present a reconfigurable, inductorless, wideband, low-noise amplifier (LNA) for multistandard applications. This LNA is based on a complementary current-reuse common source amplifier, combined with a low-current active feedback. A gyrator-C effect is used to achieve wideband input matching. High linearity is obtained through complementary derivative superposition and active shunt feedback. Implemented in 130-nm CMOS technology, the prototype exhibits a -3 dB bandwidth of 2.2 GHz. In high linearity mode, the LNA achieves a minimum NF of 2 dB, a voltage gain of 21.1 dB and an IIP3 of +14.3 dBm, with 7 mW of power consumption. In low-power mode, it draws 1.5 mW, while providing a NF of 2.6 dB, a gain of 21 dB, and an IIP3 of 4.7 dBm. The active die area is 0.0072 mm2.