Photoelectrical and optical properties of Pb_(1-x)Mn_xTe(Ga) epitaxial films

摘要

The experimental results of photoelectric and optic properties on the gallium contained (N_(Ga)=0,5/1 at%), Pb_(1-x)Mn_xTe epitaxial films with thickness d=1/5 μm, obtained by a molecular beam condensation method on BaF_2 (111) substrate have been presented. The films have been photosensitivity at T=77 K and spectral maximum of photosensitivity were displacement in the short-wave length of spectrum, with introduction Mn, which are introduced to some increasing of the gap width in Pb_(1-x)Mn_xTe. Analogous phenomenon have been observed by investigating of absorption optic edge bound also by the increase gap width. The magnitudes of gap width, determined by spectral dependence of absorption edge and photoconductivity are in the satisfactorily condition.