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Epitaxial photosensitive Pb_(1-x)Sn_xSe(In)/PbSe_(1-x)S_x heterojunctions obtained in the ultrahigh vacuum

机译:外延光敏PB_(1-x)SN_XSE(IN)/ PBSE_(1-X)S_X在超高真空中获得的异电功能

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Photosensitive isoperiodical heterojunctions (HJ) Pb_(1-x)Sn_xSe(In)/PbSe_(1-x)S_x were obtained in the ultrahigh vacuum ( ≤ 3/5 · 10~(-7)Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF_2. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J_0exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5/2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λ_(MAX)=12.0 μm. The increase of the temperature of the HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region, that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.
机译:在准平衡条件下,在超高真空(≤3/5·10〜(-7)PA)中获得光敏异诊断异质杂交(HJ)PB_(1-X)SN_XSE(IN)/ PBSE_(1-X)S_X底物BAF_2上统一技术循环中“热墙”的方法。在结构关系中,HJ组件是对外延的理想选择对。记录了HJ的Volt-Ampere和光谱特性。直线分支的伏安特性满足小型位移的指数法J = J_0Exp(EU /βκT)。在77K处,系数β在间隔1.5 / 2中变化,这对于电流泄漏通过空间电荷区域的产生 - 重组机构是典型的。在λ_(max)=12.0μm时观察到最大光敏性。 HJ制造的温度的增加导致光敏性最大值的变化到短波区域,这是通过从地层到生长层的显着锡扩散来解释的,因此HJ获取特征Varyzone结构。

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