Novel Approach for Visualizing Implants in Deep Submicron Microelectronic Devices Using Dopant Selective Etching and Low keV SEM

摘要

There is a significant need for direct dopant profile measurements in deep submicron microelectronic technologies. In this work, a novel approach for implant visualization is reported. The approach consists of two sequential steps: (1) selective chemical wet etch of doped regions with the new dopant selective etching (DSE) recipe, and (2) scanning electron microscopy imaging of the decorated regions under optimized low keV conditions. It was demonstrated that any combination of p/n type, dosage density or implant penetration depth can be visualized simultaneously using this method. The new DSE chemistry and low keV contrast mechanisms are described in detail.