PRELIMINARY MEASUREMENTS OF CHARGE COLLECTION OF P+/N JUNCTION SIC DETECTORS AND SIMULATIONS OF SCHOTTKY DIODES

摘要

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm?3), 40 μm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta prarticle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region. Preliminary simulations on Schottky diodes have been carried out using the ISE-TCAD DESSIS simulation tool. Experimental results have been well reproduced.