High Quality InAs Quantum Dots with an In(Ga,Al)AsSb Strain-Reducing Layer for Long Wavelength Photonic Devices

摘要

The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in the wavelength of 1.3 μm and above, which is essential for long wavelength photonic devices.