High Quality InAs Quantum Dots with an In(Ga,Al)AsSb Strain-Reducing Layer for Long Wavelength Photonic Devices

机译：具有In（Ga，Al）AsSb应变减小层的高质量InAs量子点，用于长波长光子器件

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The effects of InGaAsSb and InAlAsSb strain-reducing layers on the optical properties of InAs/GaAs QDs are investigated. With these Sb-containing overgrown layers, InAs QDs exhibit much enhanced photoluminescence efficiency and thermal stability in the wavelength of 1.3 μm and above, which is essential for long wavelength photonic devices.

机译：研究了InGaAsSb和InAlAsSb应变减小层对InAs / GaAs QDs光学性能的影响。通过这些含Sb的过生长层，InAs QD在1.3μm及以上的波长下显示出大大增强的光致发光效率和热稳定性，这对于长波长光子器件至关重要。

著录项

来源
《Electrochemical Society(ECS) Meeting;State-of-the-Art Program on Compound Semiconductors;SOTAPOCS;International Symposium on Process at the Semiconductor-Solution Interface; 20070506-10;20070506-10;20070506-10;20070506-10; Chicago,IL(US);Chicago,IL(US);C》|2007年|P.353940|共3页
会议地点 ChicagoIL(US);ChicagoIL(US);ChicagoIL(US);ChicagoIL(US)
作者
Jen-Inn Chyi; Wei-Sheng Liu; Pei-Chin Chiu; Meng-Jie Shiau; David M. T. Kuo; Wen-Yen Chen; Hsing-Szu Chang; Tzu-Min Hsu;
展开▼
作者单位

Department of Electrical Engineering and Department of Optics and Photonics, National Central University, Jhongli, Taiwan, R.O.C.;

Department of Physics and Center for Nano Science and Technology, National Central University, Jhongli, Taiwan, R.O.C.;

Resea;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Influence of strain-reducing layer on strain distribution of self-organized InAs/GaAs quantum dot and redshift of photoluminescence wavelength [J] . Liu YM, Yu ZY, Ren XM Chinese physics letters . 2008,第5期

机译：应变降低层对自组织InAs / GaAs量子点应变分布和光致发光波长红移的影响
2. Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength [J] . LIU Yu-Min, YU Zhong-Yuan, REN Xiao-Min 中国物理快报：英文版 . 2008,第005期

机译：应变减小层对自组织InAs / GaAs量子点应变分布和光致发光波长红移的影响
3. Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer [J] . H. Y. Liu, M. J. Steer, T. J. Badcock, Applied Physics Letters . 2005,第14期

机译：GaAsSb应变减小层覆盖的InAs / GaAs量子点的长波长发光和发射
4. High Quality InAs Quantum Dots with an In(Ga,Al)AsSb Strain-Reducing Layer for Long Wavelength Photonic Devices [C] . Jen-Inn Chyi, Wei-Sheng Liu, Pei-Chin Chiu, Electrochemical Society Meeting . 2007

机译：高质量的InAS量子点，具有用于长波长光子器件的in（Ga，Al）ASSB应变层
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices [O] . Luca Sapienza, Jin Liu, Jin Dong Song, -1

机译：结合原子力显微镜和光致发光成像为量子光子器件选择单个InAs / GaAs量子点
7. Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers [O] . M. J. da Silva, A. A. Quivy 2002

机译：使用InGaAs应变层的垂直耦合INAS / GaAs量子点的异常蓝色

High Quality InAs Quantum Dots with an In(Ga,Al)AsSb Strain-Reducing Layer for Long Wavelength Photonic Devices

摘要

著录项

相似文献

相关主题

期刊订阅