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A Study on the Preparation of TiO_(2-x)N_x Films by Reactive Deposition and Their Absorption Properties in Visible Region

机译:可见区反应区反应沉积及其吸收性能制备TiO_(2-X)N_X膜的研究

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The nitrogen-doped TiO_2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO_2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO_(2-x)N_x. Annealing the nitrogen-doped TiO_2 thin film in nitrogen atmosphere under 380 deg C is helpful for increase the concentration of nitrogen in the film, but the ratio of N_2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiCh film. The increase of the thickness of nitrogen-doped TiO_2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO_(2-x)N_x film with 1.5 percent nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO_2 films.
机译:通过中频替代的反应磁控溅射技术制备氮掺杂的TiO_2薄膜。通过XP分析氮掺杂TiO_2薄膜的N浓度。还研究了紫外线和可见区域中薄膜的吸收光谱。结果表明,中频替代反应磁控溅射技术是生长TiO_(2-X)N_X的方便方法。在380℃下氮气氛中的氮气掺杂的TiO_2薄膜有助于提高膜中的氮浓度,但反应气体中的N_2的比例主要影响TI-N键中的氮浓度tich薄膜。氮掺杂TiO_2膜的厚度的增加将增强紫外线和可见区域中膜的吸收性。 TiO_(2-x)N_X膜的吸收边缘的波长,氮气换向1.5%的氮气移至441nm,其是未掺杂的TiO_2薄膜的吸收边缘。

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