Influence of Irradiation on Excess Currents in SiC pn Structures

摘要

Excess currents of the different nature in 6H-SiC pn structures of the different origin and parameters were investigated. The effect of the suppression of the forward and reverse excess currents were observed after 0.9 MeV electron (dose 5Xl0~(16) ÷ 1.6X10~(17) cm~(-2)) and 8 MeV proton (dose 5Xl0~(15) cm~(-2)) irradiation for structures with shunts which is probably due to the presence of relatively small inhomogeneities. The shunts in another group of pn structures probably are more high capability and they are more stable against degradation during irradiation.