Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

摘要

Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p~+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p~+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p~+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from approx =10 ns to 2.5 mus.