首页> 外文会议>European Conference on Silicon Carbide and Related Materials >Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
【24h】

Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC

机译:电子和质子的联合EPR和光致发光研究辐照3C-SIC

获取原文

摘要

Combined photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after electron and proton irradiation. We have studied the effects of the thermal annealing (500 - 1000°C) on the PL intensity in the visible and the near infra-red (NIR) ranges and identified the point defects formation after these two processes of irradiation.
机译:组合光致发光(PL)和电子顺磁共振(EPR)光谱已经用于在电子和质子辐射之后表征立方碳化硅(3C-SiC)样品。 我们已经研究了热退火(500 - 1000°C)对可见光和近红外线(NIR)范围的PL强度的影响,并在这两种照射过程之后鉴定了点缺陷的形成。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号