Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth

摘要

4H-SiC single crystal was successfully grown with source powder modified by the pretreatment process in order to improve polytype stability of SiC crystal. To increase C/Si ratio in SiC source powder, SiC source powder was mixed with liquid carbon source and then pre-heated at 1200°C. SiC single crystal grown with modified source powder exhibited complete 4H polytype. The rocking curve value and defect density of SiC crystal grown with modified source powder was observed to be smaller than those of SiC crystal with conventional powder.