Silicon Carbide has proven its relevance for various MEMS and sensors devices applications. This paper presents the fabrication and the first test results of 3C-SiC electrostatic resonators actuated by applying a combination of AC and DC voltages. The recipe used for the fabrication has taken the advantage of the starting material, 3C-SiC grown on Si, which allows us to use the Si substrate as sacrificial layer to release the structures. Resonators have been fabricated by a two-step process, combining RIE ICP etching with HF wet etching. Resonators have been successfully electrostatically actuated in air-ambient condition. The resonance frequencies were clearly identified, although capacitive current created by actuation was not detected.
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