Smoothing EUVL mask substrate defects much faster and application of the smoothing process to real-world defects - (PPT)

摘要

The smoothing process reduces the residual stress by > 50%. The process time for the smoothing process has been reduced by ～60%. Some tuning may be needed to deal with substrate scratches but it is expected to increase the process time very modestly. Our first attempt at smoothing real-world substrate defects was encouraging: 30% were rendered noncritical, 60% were noncritical but likely smoothable with further process optimization, and 10% were not likely smoothable.