Design of Power Amplifier with On-Chip Matching Circuits using CPW Line Impedance (K) Inverters

摘要

Recently, spiral inductors have widely been used in the design of matching circuits of a wireless transceiver. However, such elements usually have low quality factor (Q) and may encounter the self-resonance in microwave-frequency band which permits its use in higher frequencies, and on the other hand, they occupy the large on-chip space. This paper presents a new design theory for the impedance-matching circuits for a single-chip SiGe BiCMOS receiver front-end for 5 GHz-band WLAN. The presented matching circuits are composed of conductor-backed coplanar waveguide (CPW) meanderline resonators and impedance (K) inverter. The prototype power amplifier (PA) is fabricated and measured. A few of the measured results to verify the design theory are presented.