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CoolMOS C5#8482; - The Ultimate Benchmark for Super Junction MOSFETs

机译:COOLMOS C5™ - 超级交叉机MOSFET的终极基准

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With the new CoolMOS C5™ technology Infineon sets the ultimate benchmark for high voltage MOSFETs. The C5 combines lowest R_(DSon) with low gate charge to an outstanding FOM (figure-of-merit: Q_g x R_(DSon)) by utilizing advanced charge balance mechanisms. This low FOM is the key enabler for the realization of modern power supply topologies always demanding ever higher efficiency and increasing power density. The benefit of this new generation of compensation devices is investigated in different applications.
机译:使用新的CoolMOS C5™技术英飞凌为高压MOSFET设置了最终基准。 C5将低栅极电荷的最低R_(DSON)与优秀的FOM(Q_G X R_(DSON))结合到优秀的FOM(Q_G x R_(DSON))。这种低FOM是实现现代电源拓扑的关键推动因素总是要求更高的效率和增加功率密度。在不同的应用中研究了这一新一代补偿装置的好处。

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