We have investigated the formation of cubic silicon carbide (3C-SiC) on crystalline silicon substrates by thermal annealing process. The a-SiC:H films were deposited by R.F. plasma chemical vapour deposition (PECVD) in the "silane starving plasma" condition, from silane and methane gaseous mixture. This work analyzes the crystallization process for two samples type: samples grown with and without hydrogen dilution in the gaseous mixture. To follow the crystallization process the samples were annealed in a high vacuum furnace at 1000 °C for 2 hours. FTIR and XRD analysis shown that films crystallized into 3C-SiC(lll) and this more significant for sample grown without H2 dilution. Raman scattering confirming the presence of 3C-SiC for both samples type. However, the sample grown H2 dilution shows a sign of a carbon clusters formation, which is not observed for sample grown without H2 dilution.
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