POLYCRYSTALL1ZATION OF a-SiC:H LAYERS BY EXCIMER LASER ANNEALING FOR TFT FABRICATION.

摘要

The characteristics of hydrogenated amorphous silicon carbide films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) and crystallized by KiF UV excimer laser annealing (ELA) are studied for different conditions to determine grain size, surface roughness, band gap and electrical resistivity. We also utilize as deposited and UV-ELA crystallized films to fabricate polycrystalline-SiC based TFTs and compare their performance. The results show that polycrystalline SiC TFTs obtained after UV ELA process have a quite satisfactory output characteristic (Ids x Vds), exhibiting Ids values of the order of 16 nA (for Vgs=T0 V), 4 times larger than the obtained with as deposited amorphous-SiC:H films.