- MULTI-LAYER AMORPHOUS SILICON STRUCTURE WITH IMPROVED POLY-SILICON QUALITY AFTER EXCIMER LASER ANNEAL

摘要

The embodiments described herein generally relate to methods for forming a multilayer amorphous silicon structure that can be used in thin film transistor devices. In one embodiment, the method includes the steps of: placing a buffer layer-containing substrate in a process chamber, wherein the process chamber includes a processing region, forming a plurality of amorphous silicon layers, and forming a polycrystalline silicon layer And annealing the amorphous silicon layers. Forming a plurality of layers comprises: transferring a silicon-containing precursor and a first activating gas to a processing zone to deposit a first amorphous silicon layer over the buffer layer, wherein the silicon-containing precursor and the first activating gas are plasma-maintaining a continuous flow of the silicon-containing precursor, while transferring a second activation gas to the processing zone, without the first activation gas, for depositing a second silicon layer on the first silicon layer .;