MULTI-LAYER AMORPHOUS SILICON STRUCTURE WITH IMPROVED POLY-SILICON QUALITY AFTER EXCIMER LASER ANNEAL

摘要

embodiments described herein generally relates to a method for forming a multi-layer amorphous silicon thin film transistor structure which may be used in the device. In one embodiment, the method includes a process chamber, comprising: placing a substrate comprising a buffer layer, the process chamber comprises a processing zone -, forming a plurality of the amorphous silicon layer, and is formed in the polycrystalline silicon layer To, and a step of annealing the amorphous silicon layer. The step of forming a plurality of layers to deposit a first amorphous silicon layer on the buffer layer, in a processing zone silicon-containing precursor and a step of delivering a first active gas, the silicon-containing precursor and a first activating gas plasma activated by -, and to deposit a second silicon layer on the first silicon layer, a processing section, without first activating gas, and passing the second active gas, a silicon-maintain a continuous flow of containing precursor includes the step. ;