Large grain poly-Si(/spl sim/rm 10/spl mu/m) TFTs prepared by excimer laser annealing through a thick SiON absorption layer

摘要

Poly-Si with large grain size of 10.4/spl times/4.4 /spl mu/m/sup 2/ was realized by excimer laser annealing (ELA) through the substrate and an 1 /spl mu/m thick silicon oxynitride (SiON) absorption layer underlying the top amorphous silicon. Thin-film transistors (TFTs) can then be made on this single poly-Si grain and show good electrical performance.